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Memory IC Chip Vishay IRF830B
| ECAD Module | Build or Request PCB Footprint or Symbol |
| Supply and Demand Status | Balance |
| Application Field | Used in Power Management |
| Fake Threat In the Open Market | 72 pct. |
| Popularity | High |
| Is this a common-used part? | Yes |
| Win Source Part Number | 60117-IRF830B |
| Dimension | TO-220-3 |
| Case / Package | TO-220AB |
| Mounting | Through Hole |
| Temperature Range - Operating | -55°C to 150°C (TJ) |
| Max Input Capacitance | 325pF @ 100V |
| Max Gate Charge | 20nC @ 10V |
| Maximum Gate-Source Voltage | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 104W (Tc) |
| Maximum Rds On at Id,Vgs | 1.5 Ohm @ 2.5A, 10V |
| Technology | MOSFET |
| Polarity | N-Channel |
| Status | Active |
| Packaging | Tube/Rail |
| Manufacturer | Vishay |
| Categories | Discrete Semiconductor Products |
| Gate-Source Threshold Voltage | 5V @ 250μA |
| Continuous Drain Current at 25°C | 5.3A (Tc) |
| Drain-Source Breakdown Voltage | 500V |