Yingxinyuan Int'l(Group) Ltd.
YingXinYuan Electronic Technology Co., Ltd.
Add to Cart
NPN PNP Transistor Texas Instruments/TI LM5109BQNGTTQ1
| ECAD Module | PCB Symbol,Footprint & 3D Model |
| Fake Threat In the Open Market | 34 pct. |
| Supply and Demand Status | Limited |
| Popularity | Medium |
| Manufacturer Homepage | www.ti.com |
| Win Source Part Number | 1200388-LM5109BQNGTTQ1 |
| MSL Level | 1 (Unlimited) |
| Manufacturer Pack Quantity | 1 |
| Family Part Number | LM5109 |
| Supplier Device Package | 8-WSON (4x4) |
| Manufacturer Package | 8-WFDFN Exposed Pad |
| Mounting Style | SMD |
| Temperature Range - Operating | -40°C ~ 125°C |
| Rise / Fall Time | 15ns, 15ns |
| High Side Voltage - Max (Bootstrap) | 108V |
| Input Type | Non-Inverting |
| Current - Peak Output (Source, Sink) | 1A, 1A |
| Logic Voltage - VIL, VIH | 0.8V, 2.2V |
| Supply Voltage (V) | 8V ~ 14V |
| Gate Type | N-Channel MOSFET |
| Number of Drivers | 2 |
| Channel Type | Independent |
| Driven Configuration | Half-Bridge |
| Packaging | Reel |
| Manufacturer | Texas Instruments |
| Categories | Integrated Circuits |
The LM5109B-Q1 is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with TTL/CMOS compatible logic input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the thermally enhanced WSON(8) packages.